Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon

in phosphorus-compensated p-type silicon F. E. Rougieux, D. Macdonald, A. Cuevas, S. Ruffell, J. Schmidt, B. Lim, and A. P. Knights School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra ACT 0200, Australia Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra ACT 0200, Australia Institut für Solarenergieforschung Hameln (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7, Canada